RFD14N05L Fairchild Semiconductor, RFD14N05L Datasheet - Page 3

• Manufacturer Part Number: RFD14N05L
• Description: MOSFET N-CH 50V 14A I-PAK
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of RFD14N05L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 14A, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 14 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±10V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2010 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
100
0.5
10
1.0
0.4
0.2
1.2
0.8
0.6
1
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
0
1
0 0
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.1
2
1
10
TEMPERATURE
-5
25
0.05
0.02
0.01
0.5
0.2
0.1
V
DS
SINGLE PULSE
, DRAIN TO SOURCE VOLTAGE (V)
T
C
DS(ON)
50
, CASE TEMPERATURE (
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
-4
100
Unless Otherwise Specified
125
T
o
J
C)
= MAX. RATED
10
T
150
-3
C
t, RECTANGULAR PULSE DURATION (s)
100µs
1ms
10ms
100ms
DC
= 25
o
C
175
100
10
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
200
100
16
12
10
8
4
0
10
25
-5
T
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
C
= 25
FIGURE 5. PEAK CURRENT CAPABILITY
TEMPERATURE
10
50
o
C
10
-4
-1
T
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
V
V
10
75
GS
GS
-3
t, PULSE WIDTH (s)
= 5V
= 10V
J
= P
100
10
P
DM
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
DM
-2
I
x Z
=
10
RFD14N05L, RFD14N05LSM Rev. B2
I
θ
0
25
JC
1
/t
t
t
125
10
2
1
2
x R
o
C DERATE PEAK
175 - T
-1
o
θ
C)
150
JC
+ T
C
10
150
C
0
10
1
175
10
1