RFD14N05L Fairchild Semiconductor, RFD14N05L Datasheet - Page 4

• Manufacturer Part Number: RFD14N05L
• Description: MOSFET N-CH 50V 14A I-PAK
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of RFD14N05L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 14A, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 14 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±10V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
©2010 Fairchild Semiconductor Corporation
50
10
160
140
120
100
35
30
25
20
15
10
1
80
60
40
20
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
5
0
0.01
0
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
0
If R = 0
t
If R ≠ 0
t
0
AV
AV
STARTING T
V
FIGURE 8. TRANSFER CHARACTERISTICS
DD
= (L)(I
= (L/R)ln[(I
= 25V, I
AS
R
1.5
10
)/(1.3*RATED BV
GS
V
J
GS
D
AS
= 150
, GATE TO SOURCE RESISTANCE (Ω)
t
= 14A, R
AV
, GATE TO SOURCE VOLTAGE (V)
*R)/(1.3*RATED BV
, TIME IN AVALANCHE (ms)
0.1
o
C
3.0
L
20
25
-55
= 3.57Ω
o
DSS
C
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V
- V
STARTING T
DD
DSS
DD
4.5
30
= 15V
)
-V
1
175
DD
Unless Otherwise Specified (Continued)
) +1]
o
J
C
= 25
6.0
40
o
t
C
t
d(ON)
t
d(OFF)
t
r
f
7.5
50
10
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
250
200
150
100
0
50
0
-80
V
0
2.5
GS
FIGURE 7. SATURATION CHARACTERISTICS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V
GS
I
D
= 10V
= 3.5A
= 10V, I
VOLTAGE AND DRAIN CURRENT
RESISTANCE vs JUNCTION TEMPERATURE
-40
1.5
V
DS
I
3.0
V
D
T
D
GS
J
, DRAIN TO SOURCE VOLTAGE (V)
= 7A
, JUNCTION TEMPERATURE (
= 14A
, GATE TO SOURCE VOLTAGE (V)
0
PULSE DURATION = 80µs, T
DUTY CYCLE = 0.5% MAX.
3.0
I
D
3.5
40
= 14A
V
GS
V
= 4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
GS
RFD14N05L, RFD14N05LSM Rev. B2
80
4.5
= 5V
4.0
I
D
120
= 28A
o
C)
6.0
4.5
C
V
V
= 25
V
160
GS
GS
GS
o
= 4V
= 3V
= 2.5V
C
200
7.5
5.0