FDMS8670S Fairchild Semiconductor, FDMS8670S Datasheet - Page 6

MOSFET N-CH 30V 20A POWER56

FDMS8670S

Manufacturer Part Number
FDMS8670S
Description
MOSFET N-CH 30V 20A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS8670S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
73nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0035 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS8670STR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS8670S
Manufacturer:
ALTERA
Quantity:
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Part Number:
FDMS8670S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMS8670S
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FDMS8670S Rev.C5
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS8670S.
Diode reverse recovery characteristics
Figure 14. FDMS8670S SyncFET Body
TIME: 12.5nS/Div
(continued)
6
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
1E-3
1E-4
1E-5
0.01
1E-3
1E-4
1E-5
1E-3
1E-4
1E-5
0.01
0.01
0.1
0.1
Figure 15. SyncFET Body Diode reverse
leakage vs drain to source voltage
0.1
0
0
0
5
5
5
VDS, REVERSE VOLTAGE (V)
V
V
DS
DS
, REVERSE VOLTAGE (V)
10
, REVERSE VOLTAGE (V)
10
10
T
T
T
A
A
A
= 125
= 100
T
T
15
= 25
T
J
J
T
T
J
15
T
= 100
15
= 125
J
J
= 25
J
= 100
o
o
o
= 125
= 25
C
C
C
o
o
o
C
C
C
20
o
o
C
o
C
C
20
20
25
www.fairchildsemi.com
25
25
30
30
30

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