FDMS8670S Fairchild Semiconductor, FDMS8670S Datasheet

MOSFET N-CH 30V 20A POWER56

FDMS8670S

Manufacturer Part Number
FDMS8670S
Description
MOSFET N-CH 30V 20A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS8670S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
73nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0035 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS8670STR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS8670S
Manufacturer:
ALTERA
Quantity:
2
Part Number:
FDMS8670S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMS8670S
Quantity:
105
©2009 Fairchild Semiconductor Corporation
FDMS8670S Rev.C5
FDMS8670S
N-Channel PowerTrench
30V, 42A, 3.5m
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
, T
JC
JA
Symbol
Device Marking
STG
FDMS8670S
DS(on)
DS(on)
= 3.5m at V
= 5.0m at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
= 10V, I
= 4.5V, I
FDMS8670S
Power 56
-Continuous (Silicon limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Device
D
D
= 20A
= 17A
D
T
D
A
= 25°C unless otherwise noted
D
Parameter
D
Bottom
®
DS(on)
Power 56
Package
SyncFET
S
1
S
T
T
T
T
T
T
T
S
C
C
General Description
The FDMS8670S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
device has the added benefit of an efficient monolithic Schottky
body diode.
Application
C
A
A
A
C
DS(on)
= 25°C
= 100°C
Pin 1
= 25°C
= 25°C
G
= 25°C
= 85°C
= 25°C
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
while maintaining excellent switching performance. This
Reel Size
TM
(Note 1a)
(Note 1a)
13’’
(Note 1a)
D
D
D
D
5
6
7
8
Tape Width
12mm
-55 to +150
Ratings
±20
116
200
1.6
2.5
1.3
30
42
74
20
78
50
4
3
2
1
May 2009
www.fairchildsemi.com
3000 units
Quantity
G
S
S
S
Units
°C/W
°C
W
V
V
A
tm

Related parts for FDMS8670S

FDMS8670S Summary of contents

Page 1

... Device FDMS8670S FDMS8670S ©2009 Fairchild Semiconductor Corporation FDMS8670S Rev.C5 ® SyncFET General Description The FDMS8670S has been designed to minimize losses in = 20A D power conversion application. Advancements in both silicon and = 17A D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This ...

Page 2

... Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in JA the user's board design. 2: Pulse time < 300 s, Duty cycle < 2%. FDMS8670S Rev. 25°C unless otherwise noted J Test Conditions I = 1mA 10mA, referenced to 25° ...

Page 3

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 150 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 120 125 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS8670S Rev. 25°C unless otherwise noted J PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 100 125 150 ( 0 0.01 ...

Page 4

... Figure 9. Unclamped Inductive Switching Capability 300 100 10 1 OPERATION IN THIS AREA MAY BE 0.1 LIMITED BY r DS(on) SINGLE PULSE 0. MAX RATED 1E-3 0 DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS8670S Rev. 25°C unless otherwise noted J 5000 1000 V = 20V 100 1000 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 1E FDMS8670S Rev. 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK www.fairchildsemi.com ...

Page 6

... PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS8670S. TIME: 12.5nS/Div Figure 14. FDMS8670S SyncFET Body Diode reverse recovery characteristics FDMS8670S Rev.C5 (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage ...

Page 7

... Dimensional Outline and Pad Layout FDMS8670S Rev.C5 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS8670S Rev. C5 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...

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