FDMS8670S Fairchild Semiconductor, FDMS8670S Datasheet - Page 5

• Manufacturer Part Number: FDMS8670S
• Description: MOSFET N-CH 30V 20A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS8670S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 73nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS8670STR

FDMS8670S Rev.C5
Typical Characteristics
1E-3
0.01
0.1
2
1
10
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-2
T
Figure 13. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
10
t, RECTANGULAR PULSE DURATION (s)
-1
5
10
0
10
1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
P
10
JA
DM
1
2
/t
x R
2
JA
t
1
+ T
t
2
A
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10
3