FDMS8670S Fairchild Semiconductor, FDMS8670S Datasheet - Page 4

• Manufacturer Part Number: FDMS8670S
• Description: MOSFET N-CH 30V 20A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS8670S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 73nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS8670STR

FDMS8670S Rev.C5
Typical Characteristics
1E-3
0.01
100
300
Figure 7.
0.1
10
10
10
40
8
6
4
2
0
1
1
0.01
0.1
0
Figure 9.
Figure 11. Forward Bias Safe
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
V DS , DRAIN to SOURCE VOLTAGE (V)
Switching Capability
10
Gate Charge Characteristics
0.1
V
Operating Area
DD
t
Unclamped Inductive
AV
DS(on)
Q
= 15V
, TIME IN AVALANCHE(ms)
g
20
, GATE CHARGE(nC)
1
V
DD
T
1
J
= 10V
= 125
SINGLE PULSE
T J = MAX RATED
T A = 25 O C
30
o
T
C
J
10
= 25°C unless otherwise noted
40
V
10
DD
T
= 20V
J
= 25
100
50
o
C
100ms
100us
10ms
10s
1ms
1s
DC
1000
80
60
4
5000
1000
500
100
120
100
100
0.6
10
80
60
40
20
Figure 10.
10
1
0
0.1
25
Figure 12.
-3
Figure 8.
R
Current vs Case Temperature
f = 1MHz
V
GS
JC
10
V
= 1.6
= 0V
DS
-2
SINGLE PULSE
50
Power Dissipation
Maximum Continuous Drain
, DRAIN TO SOURCE VOLTAGE (V)
to Source Voltage
T
o
C/W
C
V
t, PULSE WIDTH (s)
, CASE TEMPERATURE
Single Pulse Maximum
Capacitance vs Drain
GS
10
= 10V
V
-1
GS
1
75
= 4.5V
Limited by Package
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
0
I = I
V
GS
25
100
= 10V
10
o
C DERATE PEAK
1
150 T
---------------------- -
C
C
iss
oss
C
125
(
o
–
rss
C
www.fairchildsemi.com
10
125
)
10
A
T
A
2
= 25
o
C
10
30
150
3