FDD6635 Fairchild Semiconductor, FDD6635 Datasheet - Page 6

• Manufacturer Part Number: FDD6635
• Description: MOSFET N-CH 35V 15A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6635

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 35V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 20V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 35 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6635TR

Typical Characteristics
FDD6635 Rev. C2(W)
0.001
0.01
0.1
1
0.001
D = 0.5
0.2
0.1
0.05
0.02
0.0
SINGLE PULSE
0.01
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Figure 13. Transient Thermal Response Curve
0.1
t
1
, TIME (sec)
1
10
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
100
- T
θJA
(t) = r(t) * R
A
t
= 96 °C/W
1
= P * R
t
2
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θJA
θJA
1
(t)
/ t
2
1000