FDD6635 Fairchild Semiconductor, FDD6635 Datasheet - Page 5

MOSFET N-CH 35V 15A DPAK

FDD6635

Manufacturer Part Number
FDD6635
Description
MOSFET N-CH 35V 15A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD6635

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 20V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.01 Ohms
Drain-source Breakdown Voltage
35 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
59 A
Power Dissipation
55 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6635TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD6635
Manufacturer:
FAIRCHILD
Quantity:
35 000
Part Number:
FDD6635
Manufacturer:
FAIRCHILD
Quantity:
8 200
Typical Characteristics
FDD6635 Rev. C2(W)
1000
0.01
100
100
0.1
10
80
60
40
20
10
Figure 9. Maximum Safe Operating Area
1
0
8
6
4
2
0
Figure 11. Single Pulse Maximum Peak
0.01
Figure 7. Gate Charge Characteristics
0.1
0
R
I
D
SINGLE PULSE
DS(ON)
R
= 15A
θJA
V
T
GS
A
= 96
LIMIT
= 25
= 10V
5
o
o
C/W
C
0.1
V
1
DS
, DRAIN-SOURCE VOLTAGE (V)
10
Q
g
Current
, GATE CHARGE (nC)
t
1
, TIME (sec)
DC
15
10
1
10s
V
DS
1s
= 10V
100ms
20
20V
10ms
SINGLE PULSE
R
100
θJA
10
T
A
1ms
= 96癈 /W
= 25癈
25
15V
100µs
1000
100
30
2000
1600
1200
800
400
Figure 12. Unclamped Inductive Switching
100
1000
80
60
40
20
100
0
0
0.01
10
Figure 8. Capacitance Characteristics
0
1
0.001
Figure 10. Single Pulse Maximum
T
J
= 25
5
0.1
o
V
C
Power Dissipation
DS
0.01
, DRAIN TO SOURCE VOLTAGE (V)
t
AV
10
Capability
, TIME IN AVANCHE(ms)
C
C
C
1
t
ISS
OSS
RSS
1
, TIME (sec)
15
0.1
10
20
www.fairchildsemi.com
SINGLE PULSE
R
1
θJA
T
100
A
= 96°C/W
= 25°C
25
V
f = 1MHz
GS
= 0 V
1000
10
30

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