This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Turn–Off Delay Time d(off) t Turn–Off Fall Time f Q Total Gate Charge (TOT Total Gate Charge Gate–Source Charge gs Q Gate–Drain Charge gd FDD6635 Rev. C2( 25°C unless otherwise noted A Test Conditions = 250 μ 250 μA, Referenced to 25° ±20 V, ...
... P is maximum power dissipation 25°C and BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. 5. Starting T = 25° 1mH 15A 35V FDD6635 Rev. C2( 25°C unless otherwise noted A Test Conditions diF/dt = 100 A/µs is determined by the user's board design. ...
... SINGLE PULSE 0.001 0.001 0.01 Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6635 Rev. C2(W) 0 TIME (sec ( θJA θ ° ...
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