FDD6635 Fairchild Semiconductor, FDD6635 Datasheet - Page 3

• Manufacturer Part Number: FDD6635
• Description: MOSFET N-CH 35V 15A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6635

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 35V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 20V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 35 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6635TR

Notes:
1. R
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
5. Starting T
FDD6635 Rev. C2(W)
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics
V
trr
Qrr
the drain pins. R
Scale 1 : 1 on letter size paper
where P
SD
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
D
J
is maximum power dissipation at T
= 25°C, L = 1mH, I
θJC
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is guaranteed by design while R
AS
Parameter
= 15A, V
DD
= 35V, V
C
R
a) R
P
= 25°C and R
DS(ON)
D
1in
θJA
θCA
2
GS
pad of 2 oz copper
= 40°C/W when mounted on a
is determined by the user's board design.
= 10V
DS(on)
V
IF = 15 A,
is at T
T
A
GS
= 25°C unless otherwise noted
= 0 V,
J(max)
Test Conditions
and V
I
diF/dt = 100 A/µs
GS
S
= 15 A
= 10V. Package current limitation is 21A
(Note 2)
b) R
Min Typ Max Units
on a minimum pad.
θJA
= 96°C/W when mounted
0.8
26
16
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1.2
nC
ns
V