FDY101PZ Fairchild Semiconductor, FDY101PZ Datasheet - Page 6

• Manufacturer Part Number: FDY101PZ
• Description: MOSFET P-CH 20V 150MA SC-89
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY101PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 100pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.7 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.15 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 150mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY101PZTR

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Definition of Terms
ACEx™
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DOME™
EcoSPARK™
E
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2
Advance Information
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C™
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This datasheet contains the design specifications for
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Definition
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Rev. I18