FDY101PZ Fairchild Semiconductor, FDY101PZ Datasheet - Page 4

• Manufacturer Part Number: FDY101PZ
• Description: MOSFET P-CH 20V 150MA SC-89
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY101PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 100pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.7 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.15 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 150mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY101PZTR

Typical Characteristics
FDY101PZ Rev A
0.01
0.1
10
10
1
8
6
4
2
0
0.01
0.01
Figure 9. Maximum Safe Operating Area.
0.1
0
Figure 7. Gate Charge Characteristics.
0.0001
1
I
D
SINGLE PULSE
R
= -0.15A
θJA
V
T
GS
R
D = 0.5
A
= 280
DS(ON)
= 25
0.2
= -4.5V
0.1
0.05
0.02
0.5
o
o
0.01
LIMIT
C
C/W
0.1
-V
SINGLE PULSE
DS
, DRAIN-SOURCE VOLTAGE (V)
V
Q
DS
0.001
g
, GATE CHARGE (nC)
= -5V
1
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1
-10V
Figure 11. Transient Thermal Response Curve.
DC
1.5
10s
1s
100ms
-15V
0.01
10ms
10
1ms
2
100µs
2.5
100
0.1
t
1
, TIME (sec)
150
125
100
10
75
50
25
0.0001
8
6
4
2
0
0
0
Figure 8. Capacitance Characteristics.
C
1
Figure 10. Single Pulse Maximum
rss
0.001
4
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
0.01
oss
10
8
t
1
, TIME (sec)
0.1
P(pk)
Duty Cycle, D = t
12
T
R
J
R
θJA
- T
θJA
C
(t) = r(t) * R
100
iss
1
A
t
=280 °C/W
1
= P * R
t
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2
SINGLE PULSE
R
θJA
T
16
A
= 280°C/W
= 25°C
θJA
10
θJA
1
f = 1 MHz
V
(t)
/ t
GS
2
= 0 V
1000
100
20