FDY101PZ Fairchild Semiconductor, FDY101PZ Datasheet

MOSFET P-CH 20V 150MA SC-89

FDY101PZ

Manufacturer Part Number
FDY101PZ
Description
MOSFET P-CH 20V 150MA SC-89
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDY101PZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 150mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
150mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
100pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
8 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.7 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.15 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
150mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDY101PZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDY101PZ
Manufacturer:
IXYS
Quantity:
120
Part Number:
FDY101PZ-NL
Manufacturer:
ON/安森美
Quantity:
20 000
FDY101PZ
Single P-Channel (– 2.5V) Specified PowerTrench
General Description
This Single P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
Applications
• Li-Ion Battery Pack
©2006 Fairchild Semiconductor Corporation
FDY101PZ Rev A
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJA
, T
D
Device Marking
STG
B
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (Steady State)
Operating and Storage Junction Temperature
Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
– Continuous
– Pulsed
FDY101PZ
DS(ON)
Parameter
Device
1 S
@ V
GS
= – 2.5v.
T
A
G
=25
Reel Size
o
C unless otherwise noted
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Features
• – 150 mA, – 20 V R
• ESD protection diode (note 3)
• RoHS Compliant
G
S
®
Tape width
MOSFET
–55 to +150
1
2
Ratings
8 mm
– 1000
– 150
– 20
625
446
200
280
± 8
R
DS(ON)
DS(ON)
= 8 Ω @ V
= 12 Ω @ V
January 2006
GS
GS
www.fairchildsemi.com
= – 4.5 V
3000 units
= – 2.5 V
3
Quantity
Units
D
°C/W
mW
mA
°C
V
V

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FDY101PZ Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Ambient R θJA Package Marking and Ordering Information Device Marking Device B FDY101PZ ©2006 Fairchild Semiconductor Corporation FDY101PZ Rev A Features • – 150 mA, – – 2.5v. GS • ESD protection diode (note 3) • RoHS Compliant =25 C unless otherwise noted ...

Page 2

... Diode Reverse Recovery Charge rr Notes the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of θJA the drain pins guaranteed by design while R θJC a) FDY101PZ Rev 25°C unless otherwise noted A Test Conditions = – 250 µ – ...

Page 3

... JUNCTION TEMPERATURE ( J igure 3. On-Resistance Variation with Temperature -5V DS 0.8 0.6 0 125 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDY101PZ Rev =-1. -2.0V -1.8V 1 -1. 1.5 2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 1.75 1.5 1. 0.5 ...

Page 4

... SINGLE PULSE 0.01 0.0001 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY101PZ Rev A 150 125 -15V 100 rss 0 2 2.5 0 Figure 8 ...

Page 5

... NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY101PZ Rev A 0.50 1.70 1.14 1.50 0.50 LAND PATTERN RECOMMENDATION 0.78 0.58 SEE DETAIL A ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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