FDY101PZ Fairchild Semiconductor, FDY101PZ Datasheet - Page 3

• Manufacturer Part Number: FDY101PZ
• Description: MOSFET P-CH 20V 150MA SC-89
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY101PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 100pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.7 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.15 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 150mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY101PZTR

Typical Characteristics
FDY101PZ Rev A
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
1
0
1
0
1.6
1.4
1.2
0.8
0.6
0.5
0
1
igure 3. On-Resistance Variation with
Figure 1. On-Region Characteristics.
-50
V
GS
Figure 5. Transfer Characteristics.
V
= -4.5V
-3.5V
V
DS
I
D
GS
= -0.15A
= -5V
-25
= -4.5V
-V
-V
0.5
DS
GS
1
T
, DRAIN TO SOURCE VOLTAGE (V)
0
, GATE TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
-3.0V
T
A
25
= 125
-2.5V
1.5
o
1
C
50
-2.0V
25
o
C
75
-1.8V
-55
o
C
1.5
100
o
2
C)
-1.5V
125
150
2.5
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
1.75
1.25
0.75
0.25
0.01
1.5
0.5
5
4
3
2
1
0
0.1
Figure 2. On-Resistance Variation with
2
1
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
0
0
0
V
GS
T
Drain Current and Gate Voltage.
A
V
=-1.5V
GS
-2.0V
= 25
= 0V
T
0.2
Gate-to-Source Voltage.
A
o
C
-V
0.2
= 125
2
SD
-V
-1.8V
, BODY DIODE FORWARD VOLTAGE (V)
GS
o
-2.5V
C
, GATE TO SOURCE VOLTAGE (V)
0.4
-I
D
, DRAIN CURRENT (A)
25
0.4
o
C
T
4
A
0.6
= 125
-3.0V
-55
o
C
o
C
0.8
0.6
6
-3.5V
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1
0.8
8
I
D
= -0.075A
1.2
-4.5V
10
1.4
1