HUFA76504DK8T Fairchild Semiconductor, HUFA76504DK8T Datasheet - Page 3

MOSFET N-CHAN 80V 2.3A 8-SOIC

HUFA76504DK8T

Manufacturer Part Number
HUFA76504DK8T
Description
MOSFET N-CHAN 80V 2.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUFA76504DK8T

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.173 Ohms
Forward Transconductance Gfs (max / Min)
0.00008 S
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
2.3 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
100
200
1.2
1.0
0.8
0.6
0.4
0.2
10
1
0
0.001
10
0.01
0
0.1
V
-5
V
2
1
GS
GS
10
= 4.5V
-5
= 10V
TEMPERATURE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
25
T
A
, AMBIENT TEMPERATURE (
10
-4
50
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
75
10
-3
10
100
SINGLE PULSE
-3
o
FIGURE 4. PEAK CURRENT CAPABILITY
C)
125
10
t, RECTANGULAR PULSE DURATION (s)
-2
10
-2
150
t, PULSE WIDTH (s)
10
-1
10
-1
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
3.0
2.5
2.0
1.5
1.0
0.5
0
25
V
GS
10
R
AMBIENT TEMPERATURE
10
0
= 4.5V, R
0
JA
50
= 228
T
A
, AMBIENT TEMPERATURE (
o
JA
NOTES:
DUTY FACTOR: D = t
PEAK T
C/W
= 228
V
GS
75
10
10
1
J
o
= 10V, R
1
C/W
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
C
I = I
DM
= 25
25
x Z
100
o
JA
C
P
JA
o
= 50
DM
C DERATE PEAK
1
/t
10
x R
2
10
150 - T
o
R
2
C/W
2
125
o
JA
C)
JA
t
125
1
+ T
= 228
A
t
Rev. A, June 4, 2001
2
A
o
C/W
150
10
10
3
3

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