FDMA3023PZ Fairchild Semiconductor, FDMA3023PZ Datasheet - Page 6
FDMA3023PZ
Manufacturer Part Number
FDMA3023PZ
Description
MOSFET P-CH DUAL 30V MICROFET6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMA3023PZ.pdf
(8 pages)
Specifications of FDMA3023PZ
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
530pF @ 15V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.9 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA3023PZTR
Available stocks
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Part Number
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Quantity
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©2010 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.B2
Typical Characteristics
0.005
0.01
0.1
2
1
10
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 12.
10
-2
SINGLE PULSE
R
θ
JA
T
Junction-to-Ambient Transient Thermal Response Curve
J
= 173
= 25 °C unless otherwise noted
o
C/W
10
-1
t, RECTANGULAR PULSE DURATION (sec)
6
1
10
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
P
θJA
DM
100
1
/t
x R
2
θJA
t
1
+ T
t
2
A
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