FDMA3023PZ Fairchild Semiconductor, FDMA3023PZ Datasheet - Page 2

• Manufacturer Part Number: FDMA3023PZ
• Description: MOSFET P-CH DUAL 30V MICROFET6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA3023PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 530pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.9 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA3023PZTR

©2010 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.B2
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
S
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
∆T
∆T
g(TOT)
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25 °C unless otherwise noted
I
I
V
V
V
I
V
V
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DD
GS
GS
= -2.9 A, di/dt = 100 A/µs
= -250 µA, V
= -250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= -24 V, V
= -5 V, I
= -15 V, V
= 0 V, I
= ±8 V, V
= V
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
= -4.5 V, I
= -15 V, I
= -4.5 V, R
= -15 V, I
= -4.5 V
DS
2
Test Conditions
, I
S
D
D
= -1.1 A
D
D
DS
D
D
D
D
D
= -2.9 A
= -250 µA
GS
GS
GS
= -1.0 A,
GEN
= -2.9 A
= -2.9 A
= -2.6 A
= -1.7 A
= -1.0 A
= -2.9 A, T
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 Ω
(Note 2)
J
= 125 °C
-0.4
Min
-30
-0.6
-0.8
Typ
122
151
110
400
6.6
-24
71
97
10
55
45
18
0.9
1.9
18
7.9
5
4
62
3
±100
Max
-1.0
130
170
240
140
530
-1.1
-1.2
1 0
1 0
100
90
70
65
33
13
33
-1
11
www.fairchildsemi.com
mV/°C
mV/°C
Units
mΩ
µA
nA
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
A
V