FDMA3023PZ Fairchild Semiconductor, FDMA3023PZ Datasheet - Page 4

• Manufacturer Part Number: FDMA3023PZ
• Description: MOSFET P-CH DUAL 30V MICROFET6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA3023PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 530pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.9 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA3023PZTR

©2010 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.B2
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On Resistance
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0.5
0
Figure 1.
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
I
D
GS
DS
= -2.9 A
-50
= -5 V
vs Junction Temperature
= -4.5 V
-V
-V
T
0.5
T
-25
GS
DS
J
On Region Characteristics
J
,
, GATE TO SOURCE VOLTAGE (V)
= 25
,
JUNCTION TEMPERATURE (
V
DRAIN TO SOURCE VOLTAGE (V)
GS
1.0
T
o
0
= -1.8 V
J
C
= 125
V
GS
25
µ
V
1.0
= -2.5 V
s
GS
o
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= -3.5 V
V
50
T
T
GS
J
J
= -55
= -4.5 V
= 25 °C unless otherwise noted
1.5
75
o
1.5
C
o
100 125 150
C )
V
GS
= -1.5 V
µ
s
2.0
2.0
4
0.001
0.01
400
300
200
100
0.1
10
6
5
4
3
2
1
0
0
1
Figure 2.
Figure 4.
1.0
0.2
Forward Voltage vs Source Current
1
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
J
= 125
= 0 V
-V
1.5
SD
0.4
-V
2
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
On-Resistance vs Gate to
o
GS
-I
C
Source Voltage
D
Source to Drain Diode
2.0
V
,
,
GS
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
= -3.5 V
T
J
0.6
= 25
3
2.5
T
J
V
= -55
o
GS
C
V
T
I
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
J
D
= -2.5 V
= 25
= -1.45 A
3.0
o
= -1.5 V
C
0.8
4
T
o
C
J
= 125
3.5
o
V
V
C
1.0
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5
GS
GS
4.0
= -1.8 V
= -4.5 V
µ
µ
s
s
4.5
1.2
6