FDMA3023PZ Fairchild Semiconductor, FDMA3023PZ Datasheet - Page 5

• Manufacturer Part Number: FDMA3023PZ
• Description: MOSFET P-CH DUAL 30V MICROFET6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA3023PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 530pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.9 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA3023PZTR

©2010 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.B2
Typical Characteristics
Figure 9.
10
10
10
10
10
10
10
10
5
4
3
2
1
0
Figure 7.
0
200
100
-2
-3
-4
-5
-6
-7
-8
-9
0.5
10
I
0
D
1
10
= -2.9 A
V
Gate Leakage vs Gate to Source Voltage
GS
-3
= 0 V
2
-V
Gate Charge Characteristics
3
GS ,
V
Q
GS
GATE TO SOURCE VOLTAGE (V)
V
g
, GATE CHARGE (nC)
DD
= -4.5 V
= -10 V
4
6
T
J
= 125
Figure 11. Single Pulse Maximum Power Dissipation
10
-2
V
T
o
DD
6
C
J
9
= -20 V
= 25 °C unless otherwise noted
V
DD
T
= -15 V
J
8
= 25
12
o
C
10
10
15
-1
t, PULSE WIDTH (sec)
5
Figure 10.
0.01
0.1
1000
10
100
1
0.01
10
0.1
1
THIS AREA IS
LIMITED BY r
Figure 8.
f = 1 MHz
V
GS
= 0 V
Forward Bias Safe Operating Area
-V
-V
DS
0.1
DS
to Source Voltage
, DRAIN to SOURCE VOLTAGE (V)
DS(on)
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
SINGLE PULSE
T
R
T
J
A
θ
JA
= MAX RATED
= 25
= 173
1
o
C
1
o
C/W
10
SINGLE PULSE
R
T
A
θ
JA
= 25
10
= 173
o
C
o
10
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C/W
10 ms
100 ms
1 s
10 s
DC
1 ms
100
C
C
C
1000
iss
oss
rss
30
200