FDG6318PZ Fairchild Semiconductor, FDG6318PZ Datasheet

FDG6318PZ

Manufacturer Part Number

FDG6318PZ

Description

MOSFET P-CH DUAL 20V SC70-6

Manufacturer

Fairchild Semiconductor

Datasheets

1.FDG6318PZ.pdf (9 pages)

2.FDG6318P.pdf (5 pages)

Specifications of FDG6318PZ

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

780 mOhm @ 500mA, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

500mA

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

1.62nC @ 4.5V

Input Capacitance (ciss) @ Vds

85.4pF @ 10V

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Configuration

Dual

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.78 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

1.1 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

0.5 A

Power Dissipation

300 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDG6318PZ

Manufacturer:

FAIRCHILD

Quantity:

30 000

Current page: 1 of 5
Download datasheet (124Kb)

FDG6318P

Dual P-Channel, Digital FET

General Description

These dual P-Channel logic level enhancement mode

MOSFET are produced using Fairchild Semiconductor’s

advanced

especially tailored to minimize on-state resistance. This

device has been designed especially for low voltage

applications as a replacement for bipolar digital

transistors and small signal MOSFETS.

Applications

2003 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

Battery management

DSS

GSS

, T

Device Marking

STG

.38

PowerTrench

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Pin 1

process

SC70-6

– Continuous

– Pulsed

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.

FDG6318P

Device

Parameter

that

has

been

=25

C unless otherwise noted

Reel Size

7’’

(Note 1)

Features

–0.5 A, –20 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits (V

Compact industry standard SC70-6 surface mount

package

1 or 4

2 or 5

3 or 6

Tape width

–55 to +150

8mm

Ratings

DS(ON)

–0.5

–1.8

–20

±12

415

0.3

= 780 m @ V

= 1200 m @ V

GS(th)

< 1.5V).

4 or 1

6 or 3

5 or 2

January 2003

FDG6318P Rev C (W)

3000 units

Quantity

= –4.5 V

= –2.5 V

Units

C/W

Related parts for FDG6318PZ

FDG6318PZ Summary of contents

Page 1

... FDG6318P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown DSS Voltage Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) Gate ...

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FDG6318PZ Fairchild Semiconductor, FDG6318PZ Datasheet

FDG6318PZ

Specifications of FDG6318PZ

Available stocks

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FDG6318PZ Summary of contents

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