FDG6318PZ Fairchild Semiconductor, FDG6318PZ Datasheet
FDG6318PZ
Specifications of FDG6318PZ
Available stocks
Related parts for FDG6318PZ
FDG6318PZ Summary of contents
Page 1
... FDG6318P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown DSS Voltage Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) Gate ...
Page 3
Typical Characteristics 1.8 -3. -10.0V GS -4.5V -6.0V 1.2 0 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -0. -4.5V GS 1.2 1.1 1 ...
Page 4
Typical Characteristics -0. - -15V 0.3 0.6 0.9 1 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics LIMIT DS(ON) 1 10ms 100ms ...
Page 5
CROSSVOLT â â â â â Rev. I2 ...