FDG6318PZ Fairchild Semiconductor, FDG6318PZ Datasheet - Page 3

MOSFET P-CH DUAL 20V SC70-6

FDG6318PZ

Manufacturer Part Number
FDG6318PZ
Description
MOSFET P-CH DUAL 20V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of FDG6318PZ

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
780 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.62nC @ 4.5V
Input Capacitance (ciss) @ Vds
85.4pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.78 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1.1 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.5 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG6318PZ
Manufacturer:
FAIRCHILD
Quantity:
30 000
Typical Characteristics
1.8
1.2
0.6
1.8
1.2
0.6
0
0
Figure 3. On-Resistance Variation with
0.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0
Figure 1. On-Region Characteristics.
1
-50
Figure 5. Transfer Characteristics.
V
GS
V
= -10.0V
DS
V
I
-6.0V
D
GS
= -5V
0.5
1
= -0.5A
-25
= -4.5V
-V
-V
GS
T
DS
, GATE TO SOURCE VOLTAGE (V)
J
Temperature.
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
1.5
0
1
25
-4.5V
1.5
2
T
-3.5V
A
= -55
50
2.5
o
C
2
75
-3.0V
o
125
C)
-2.5V
o
C
2.5
3
-2.0V
100
25
o
C
3.5
125
3
Figure 6. Body Diode Forward Voltage Variation
1.8
1.4
0.6
0.2
0.0001
1
1.75
1.25
0.75
0.001
1.5
0.01
Figure 2. On-Resistance Variation with
0
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.1
1
10
1
0
0
Drain Current and Gate Voltage.
V
T
GS
A
= 25
V
= 0V
GS
Gate-to-Source Voltage.
0.2
2
= -3.5V
o
-V
C
-V
SD
0.4
GS
T
, BODY DIODE FORWARD VOLTAGE (V)
A
, GATE TO SOURCE VOLTAGE (V)
= 125
-4.0V
0.4
-I
D
, DRAIN CURRENT (A)
o
-4.5V
C
4
0.6
T
25
0.8
A
-5.0V
= 125
o
C
o
0.8
C
6
-55
-6.0V
o
C
1.2
-10.0V
1
FDG6318P Rev C (W)
8
I
1.2
D
= -0.25A
1.6
1.4
10

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