FDG6318PZ Fairchild Semiconductor, FDG6318PZ Datasheet - Page 4
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FDG6318PZ
Manufacturer Part Number
FDG6318PZ
Description
MOSFET P-CH DUAL 20V SC70-6
Manufacturer
Fairchild Semiconductor
Specifications of FDG6318PZ
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
780 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.62nC @ 4.5V
Input Capacitance (ciss) @ Vds
85.4pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.78 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1.1 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.5 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG6318PZ
Manufacturer:
FAIRCHILD
Quantity:
30 000
Typical Characteristics
10
0.01
8
6
4
2
0
0.1
Figure 9. Maximum Safe Operating Area.
10
Figure 7. Gate Charge Characteristics.
1
0
0.1
SINGLE PULSE
R
R
I
D
V
JA
DS(ON)
T
= -0.5A
GS
0.001
0.3
A
= 415
0.01
= 25
= -4.5V
0.1
0.0001
1
LIMIT
o
o
C/W
C
-V
0.6
D = 0.5
DS
, DRAIN-SOURCE VOLTAGE (V)
0.2
Q
0.1
0.05
SINGLE PULSE
g
1
0.02
, GATE CHARGE (nC)
0.01
DC
0.9
V
DS
1s
= -5V
0.001
100ms
Figure 11. Transient Thermal Response Curve.
1.2
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
-15V
10ms
10
1.5
1ms
-10V
100 s
0.01
1.8
100
2.1
t
1
, TIME (sec)
0.1
120
30
24
18
12
0.0001
80
40
6
0
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
rss
0.001
4
1
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
0.01
C
oss
8
P(pk)
Duty Cycle, D = t
T
R
0.1
R
J
- T
JA
JA
10
(t) = r(t) * R
C
A
= 415 °C/W
t
1
iss
= P * R
t
2
12
1
JA
1
JA
(t)
/ t
SINGLE PULSE
2
R
JA
FDG6318P Rev C (W)
T
16
A
10
= 415
100
= 25
V
f = 1MHz
GS
o
o
C
C/W
= 0 V
100
20