FDG6318PZ Fairchild Semiconductor, FDG6318PZ Datasheet - Page 4

• Manufacturer Part Number: FDG6318PZ
• Description: MOSFET P-CH DUAL 20V SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6318PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.62nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 85.4pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.78 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.1 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
0.01
8
6
4
2
0
0.1
Figure 9. Maximum Safe Operating Area.
10
Figure 7. Gate Charge Characteristics.
1
0
0.1
SINGLE PULSE
R
R
I
D
V
JA
DS(ON)
T
= -0.5A
GS
0.001
0.3
A
= 415
0.01
= 25
= -4.5V
0.1
0.0001
1
LIMIT
o
o
C/W
C
-V
0.6
D = 0.5
DS
, DRAIN-SOURCE VOLTAGE (V)
0.2
Q
0.1
0.05
SINGLE PULSE
g
1
0.02
, GATE CHARGE (nC)
0.01
DC
0.9
V
DS
1s
= -5V
0.001
100ms
Figure 11. Transient Thermal Response Curve.
1.2
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
-15V
10ms
10
1.5
1ms
-10V
100 s
0.01
1.8
100
2.1
t
1
, TIME (sec)
0.1
120
30
24
18
12
0.0001
80
40
6
0
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
rss
0.001
4
1
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
0.01
C
oss
8
P(pk)
Duty Cycle, D = t
T
R
0.1
R
J
- T
JA
JA
10
(t) = r(t) * R
C
A
= 415 °C/W
t
1
iss
= P * R
t
2
12
1
JA
1
JA
(t)
/ t
SINGLE PULSE
2
R
JA
FDG6318P Rev C (W)
T
16
A
10
= 415
100
= 25
V
f = 1MHz
GS
o
o
C
C/W
= 0 V
100
20