FDS4897C Fairchild Semiconductor, FDS4897C Datasheet - Page 8

• Manufacturer Part Number: FDS4897C
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4897C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.2A, 4.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 20V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.029 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.2 A @ N Channel or 4.4 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4897CTR

Typical Characteristics : N and P-Channel
FDS4897C Rev C(W)
0.001
0.01
0.1
0.0001
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Figure 25. Transient Thermal Response Curve.
0.01
0.1
t
1
, TIME (sec)
1
10
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
100
θJA
(t) = r(t) * R
A
t
= 135
1
= P * R
t
2
www.fairchildsemi.com
o
C/W
θJA
θJA
1
(t)
/ t
2
1000