FDS4897C Fairchild Semiconductor, FDS4897C Datasheet - Page 3

• Manufacturer Part Number: FDS4897C
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4897C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.2A, 4.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 20V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.029 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.2 A @ N Channel or 4.4 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4897CTR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device.
FDS4897C Rev C(W)
Symbol
Switching Characteristics
t
t
t
t
Q
Q
Q
V
t
Q
Electrical Characteristics
Drain–Source Diode Characteristics
the drain pins. R
d(on)
r
d(off)
f
rr
SD
θJA
g
gs
gd
rr
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
θJC
is guaranteed by design while R
Parameter
a) 78°C/W when
mounted on a
0.5 in
copper
2
pad of 2 oz
(Note 2)
θCA
Q1
V
V
Q2
V
V
Q1
V
Q2
V
V
V
Q1
I
Q2
I
F
F
is determined by the user's board design.
(continued)
DD
GS
DD
GS
DS
DS
GS
GS
= 6.2 A, d
= –4.4 A, d
= 20 V, I
= –20 V, I
= 20 V, I
= 10V,
= –20 V, I
= –10V, R
= 0 V, I
= 0 V, I
Test Conditions
b) 125°C/W when
S
S
iF
D
= 1.3 A
= –1.3 A
mounted on a .02 in
pad of 2 oz copper
iF
R
/d
D
= 6.2 A, V
D
D
/d
GEN
GEN
= –4.4 A,V
t
= 1 A,
= –1 A,
t
= 100 A/µs
= 100 A/µs
= 6 Ω
= 6 Ω
T
A
= 25°C unless otherwise noted
GS
GS
= 10 V
2
=–10 V
(Note 2)
(Note 2)
Type Min
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
c) 135°C/W when mounted on a
minimum pad.
Typ Max Units
–0.7
2.4
2.8
0.7
12
15
23
45
18
14
20
17
24
12
9
5
3
3
4
7
–1.2
1.2
18
22
10
27
37
72
32
20
28
6
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nC
nC
nC
nC
ns
ns
ns
ns
ns
V