FDS4897C Fairchild Semiconductor, FDS4897C Datasheet - Page 7

MOSFET N/P-CH 40V 8-SOIC

FDS4897C

Manufacturer Part Number
FDS4897C
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS4897C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 6.2A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6.2A, 4.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
760pF @ 20V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.029 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.2 A @ N Channel or 4.4 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4897CTR

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Typical Characteristics: Q2 (P-Channel)
FDS4897C Rev C(W)
0.01
100
0.1
10
10
Figure 21. Maximum Safe Operating Area.
40
30
20
10
8
6
4
2
0
1
0
0.001
Figure 19. Gate Charge Characteristics.
0.1
Figure 23. Single Pulse Maximum Peak
0
R
I
D
DS(ON)
SINGLE PULSE
= -4.4A
R
θ JA
V
T
GS
A
= 135
LIMIT
0.01
= 25
= -10V
5
o
o
C/W
C
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.1
Q
1
g
, GATE CHARGE (nC)
Current
10
t
1
DC
, TIME (sec)
V
DS
10s
= -10V
1
1s
100ms
15
-30V
10ms
10
10
1ms
SINGLE PULSE
R
θ JA
T
20
A
100
= 135°C/W
-20V
= 25°C
100 μ
1000
100
25
1400
1200
1000
100
800
600
400
200
Figure 24. Unclamped Inductive Switching
10
50
40
30
20
10
1
0
0
0.001
0.01
Figure 20. Capacitance Characteristics.
0
C
T
Figure 22. Single Pulse Maximum
J
RSS
= 25
5
o
0.01
C
C
OSS
-V
Power Dissipation.
10
DS
, DRAIN TO SOURCE VOLTAGE (V)
t
AV
0.1
0.1
, TIME IN AVANCHE(ms)
Capability
15
t
1
C
, TIME (sec)
ISS
20
1
25
10
1
SINGLE PULSE
30
R
θ JA
www.fairchildsemi.com
T
A
= 135°C/W
100
f = 1 MHz
V
= 25°C
GS
35
= 0 V
1000
40
10

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