FDS4897C Fairchild Semiconductor, FDS4897C Datasheet - Page 2

• Manufacturer Part Number: FDS4897C
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4897C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.2A, 4.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 20V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.029 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.2 A @ N Channel or 4.4 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4897CTR

FDS4897C Rev C(W)
BV
ΔBV
I
I
E
I
V
ΔV
R
g
C
C
C
R
Electrical Characteristics
Symbol
Off Characteristics
DSS
GSS
On Characteristics
Dynamic Characteristics
Drain-Source Avalanche Ratings
AS
FS
AS
ΔT
GS(th)
DS(on)
iss
oss
rss
G
ΔT
DSS
GS(th)
DSS
J
J
Drain-Source Avalanche
Energy (Single Pulse)
Drain-Source Avalanche
Current
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Resistance
Parameter
(Note 2)
V
V
I
I
V
V
V
V
V
V
V
V
Q1
V
Q2
f = 1.0 MHz
V
V
D
D
V
V
V
I
I
V
V
V
D
D
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DD
DD
DS
GS
GS
DS
DS
GS
= 250 μA, Referenced to 25°C
= –250 µA, Referenced to 25°C
(Note 3)
= 250 μA, Referenced to 25°C
= –250 µA, Referenced to 25°C
= V
= V
= 10 V,
= 4.5 V,
= 10 V, I
= –10 V,
= –4.5 V,
= –10 V, I
= 10 V,
= –10 V,
= 20 V, V
= 40 V,
= –40 V, I
= –20 V, V
= 32 V,
= –32 V,
= 0 V,
= 0 V,
= ±20 V,
GS
GS
T
Test Conditions
A
,
,
= 25°C unless otherwise noted
GS
D
D
I
D
D
GS
= 6.2 A, T
= –4.4 A, T
= 0 V, f = 1.0 MHz
= 7.3 A, L = 1 mH
=–8.7 A, L = 1 mH
I
I
V
V
V
I
I
I
I
I
I
I
I
= 0 V, f = 1.0 MHz
D
D
D
D
D
D
D
D
D
D
GS
GS
DS
= 250 μA
= –250 μA
= 250 μA
= –250 µA
= 6.2 A
= 4.8 A
= –4.4 A
= –3.8 A
= 6.2 A
=–4.4 A
= 0 V
= 0 V
= 0 V
J
J
= 125°C
= 125°C
Type Min Typ Max Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
All
–40
–1
40
1
1050
–8.7
–1.7
–40
760
100
140
7.3
1.9
1.2
34
–5
21
26
29
37
50
55
21
12
60
70
4
9
±100
–1
–3
29
36
43
46
63
73
27
38
1
3
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mV/°C
mV/°C
mΩ
mJ
mJ
μA
nA
pF
pF
pF
A
V
S
Ω
V