HGTG20N60C3D Fairchild Semiconductor, HGTG20N60C3D Datasheet - Page 5

• Manufacturer Part Number: HGTG20N60C3D
• Description: IGBT UFS N-CHAN 600V 45A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG20N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 20A
• Current - Collector (ic) (max): 45A
• Power - Max: 164W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
50
45
40
35
30
25
20
300
250
200
150
100
300
275
250
225
200
175
150
125
100
50
0
5
5
5
R
DUTY CYCLE <0.5%, V
PULSE DURATION = 250 s
G
FIGURE 13. TRANSFER CHARACTERISTIC
= 10 , L = 1mH, V
T
6
T
J
10
EMITTER CURRENT
EMITTER CURRENT
I
J
CE
= 150
10
I
= 25
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
7
, COLLECTOR TO EMITTER CURRENT (A)
GE
o
o
C, V
C, V
15
, GATE TO EMITTER VOLTAGE (V)
15
8
GE
GE
CE
= 10V, V
= 10V, V
9
CE
20
= 480V
20
T
T
= 10V
R
J
J
G
10
= 25
GE
= 25
GE
T
= 10 , L = 1mH, V
C
= 15V
= 15V
25
o
o
25
= -55
C, T
C, T
11
J
o
J
T
C
C
= 150
= 150
Unless Otherwise Specified (Continued)
12
30
= 25
30
o
o
o
C, V
C, V
C
13
T
CE
C
GE
35
GE
35
= 150
= 480V
14
= 10V
= 15V
o
C
40
40
15
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
120
110
100
200
175
150
125
100
90
80
70
60
50
40
16
14
12
10
75
50
25
8
6
4
2
0
0
5
5
0
R
R
T
I
G
G
FIGURE 14. GATE CHARGE WAVEFORMS
J
G (REF)
= 25
= 10 , L = 1mH, V
10
= 10 , L = 1mH, V
EMITTER CURRENT
CURRENT
10
10
I
I
CE
CE
o
C, T
T
= 1mA, R
, COLLECTOR TO EMITTER CURRENT (A)
20
, COLLECTOR TO EMITTER CURRENT (A)
J
T
= 150
J
J
= 25
= 150
V
15
V
15
30
CE
CE
o
Q
C, V
o
L
g
C, V
= 600V
= 200V
o
, GATE CHARGE (nC)
= 15 , T
C, V
T
CE
CE
40
J
GE
GE
20
20
= 25
= 480V
= 480V
GE
= 10V OR V
= 10V OR 15V
o
50
= 10V
C
C and T
= 25
25
25
60
o
V
C
CE
GE
J
= 150
= 400V
= 15V
70
30
30
HGTG20N60C3D Rev. B
o
C, V
80
GE
35
35
= 15V
90
100
40
40