HGTG20N60C3D Fairchild Semiconductor, HGTG20N60C3D Datasheet

IGBT UFS N-CHAN 600V 45A TO-247

HGTG20N60C3D

Manufacturer Part Number
HGTG20N60C3D
Description
IGBT UFS N-CHAN 600V 45A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG20N60C3D

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 20A
Current - Collector (ic) (max)
45A
Power - Max
164W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTG20N60C3D
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HGTG20N60C3DR
Manufacturer:
LT
Quantity:
2 100
©2001 Fairchild Semiconductor Corporation
45A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
IGBT used is development type TA49178. The diode used in
anti-parallel with the IGBT is the RHRP3060 (TA49063).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49179.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
HGTG20N60C3D
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-247
PACKAGE
C
E
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
G20N60C3D
o
C and 150
BRAND
o
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
C. The
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• 45A, 600V, T
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
December 2001
C
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
= 25
JEDEC STYLE TO-247
o
C
HGTG20N60C3D
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
E
C
HGTG20N60C3D Rev. B
G
4,587,713
4,644,637
4,801,986
4,883,767
J
= 150
o
C

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HGTG20N60C3D Summary of contents

Page 1

... Data Sheet 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...

Page 2

... D 1. -55 to 150 J STG 260 MIN TYP 600 - 150 1 150 C - 1.5 C 3.4 4 480V 120 - 600V 8.4 CES V = 15V - 20V - 122 151 - 55 - 500 - 500 UNITS MAX UNITS - V 250 A 5.0 mA 1.8 V 1.9 V 6.3 V 250 110 nC 145 210 550 J 700 J HGTG20N60C3D Rev. B ...

Page 3

... FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA MIN TYP o = 150 280 - 108 - 1.0 - 1 140 150 15V 100 120 100 100 200 300 400 V , COLLECTOR TO EMITTER VOLTAGE (V) CE MAX UNITS 450 ns 210 ns 1.1 mJ 1 0.76 C/W o 1.2 C/W 500 600 700 HGTG20N60C3D Rev. B ...

Page 4

... PULSE DURATION = 250 s 250 200 150 - 100 COLLECTOR TO EMITTER VOLTAGE ( 1mH 480V G CE 2.5 2 150 10V OR 15V J GE 1 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 450 400 I SC 350 300 250 200 t SC 150 150 10V OR 15V HGTG20N60C3D Rev. B ...

Page 5

... C and COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 120 1mH 480V G CE 110 100 150 10V 10V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA (REF 600V 200V GATE CHARGE (nC) g FIGURE 14. GATE CHARGE WAVEFORMS o = 150 15V 15V 400V 100 HGTG20N60C3D Rev. B ...

Page 6

... FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP ©2001 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued) 5 FREQUENCY = 1MHz C IES OES 1 C RES COLLECTOR TO EMITTER VOLTAGE ( RECTANGULAR PULSE DURATION ( 150 C 2.0 2.5 3.0 FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT DUTY FACTOR PEAK /dt = 200A FORWARD CURRENT ( HGTG20N60C3D Rev. B ...

Page 7

... D C OFF ) is defined 50% duty factor was used (Figure 3) and D ) are approximated )/ and E are defined in the switching waveforms OFF is the integral of the instantaneous during turn-on and i.e., the collector current equals zero ( d(ON d(ON d(OFF The )/ the OFF during 0). CE HGTG20N60C3D Rev. B ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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