HGTG20N60C3D Fairchild Semiconductor, HGTG20N60C3D Datasheet - Page 3

IGBT UFS N-CHAN 600V 45A TO-247

HGTG20N60C3D

Manufacturer Part Number
HGTG20N60C3D
Description
IGBT UFS N-CHAN 600V 45A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG20N60C3D

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 20A
Current - Collector (ic) (max)
45A
Power - Max
164W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTG20N60C3D
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HGTG20N60C3DR
Manufacturer:
LT
Quantity:
2 100
Electrical Specifications
NOTES:
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
3. Turn-Off Energy Loss (E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
50
40
30
20
10
0
25
PARAMETER
TEMPERATURE
50
T
C
, CASE TEMPERATURE (
OFF
75
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
T
C
= 25
100
o
C, Unless Otherwise Specified (Continued)
Unless Otherwise Specified
o
SYMBOL
C)
t
t
d(OFF)I
d(ON)I
E
R
E
V
OFF
t
t
t
ON
125
EC
rr
rI
fI
JC
V
GE
CE
= 15V
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
IGBT and Diode at T
I
V
V
R
L = 1mH
Test Circuit (Figure 19)
I
I
I
IGBT
Diode
CE
EC
EC
EC
150
CE
GE
G
= 10
= I
= 20A
= 20A, dI
= 2A, dI
= 0.8 BV
= 15V
C110
TEST CONDITIONS
EC
EC
CES
/dt = 200A/ s
/dt = 200A/ s
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
140
120
100
80
60
40
20
J
0
= 150
0
T
J
= 150
o
C
100
V
o
CE
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
G
200
= 10 , V
MIN
-
-
-
-
-
-
-
-
-
-
-
300
GE
= 15V, L = 100 H
TYP
280
108
1.0
1.2
1.5
400
28
24
32
-
-
-
500
MAX
HGTG20N60C3D Rev. B
0.76
450
210
1.1
1.7
1.9
1.2
32
28
55
47
600
UNITS
o
o
C/W
C/W
mJ
mJ
ns
ns
ns
ns
ns
ns
V
700

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