HGTG20N60C3D Fairchild Semiconductor, HGTG20N60C3D Datasheet - Page 2

IGBT UFS N-CHAN 600V 45A TO-247

HGTG20N60C3D

Manufacturer Part Number
HGTG20N60C3D
Description
IGBT UFS N-CHAN 600V 45A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG20N60C3D

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 20A
Current - Collector (ic) (max)
45A
Power - Max
164W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTG20N60C3D
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HGTG20N60C3DR
Manufacturer:
LT
Quantity:
2 100
Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
©2001 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
1. Pulse width limited by maximum junction temperature.
2. V
At T
At T
CE(PK)
C
C
= 25
= 110
o
= 360V, T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
J
= 125
C
C
= 25
o
> 25
C, R
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
G
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
C
T
= 10
= 25
C
= 25
GE
GE
o
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
o
C, Unless Otherwise Specified
SYMBOL
V
V
Q
t
BV
t
CE(SAT)
SSOA
d(OFF)I
V
GE(TH)
d(ON)I
E
I
I
E
G(ON)
CES
GES
GEP
OFF
t
t
ON
CES
rI
fI
I
V
I
V
I
V
T
10
L = 100 H
I
I
V
IGBT and Diode at T
I
V
V
R
L = 1mH
Test Circuit (Figure 19)
C
C
C
CE
CE
CE
J
CE
GE
GE
CE
CE
GE
G
= 250 A, V
= I
= 250 A, V
= 150
= 10
= I
= I
= I
= BV
= 15V
= 20V
= 0.5 BV
= 0.8 BV
= 15V
C110
V
C110
C110
C110
GE
o
CES
C, R
TEST CONDITIONS
= 15V,
, V
CES
CES
GE
CE
CE
G
=
= V
= 0V
= 0.5 BV
J
GE
T
T
T
T
V
V
V
V
J
= 25
, T
C
C
C
C
GE
GE
CE
CE
C110
GEM
= 25
= 150
= 25
= 150
GES
CES
STG
C25
CES
CM
= 480V
= 600V
= 15V
= 20V
SC
SC
o
C
D
L
o
o
C
C
o
o
C
C
HGTG20N60C3D
20A at 600V
-55 to 150
MIN
600
120
3.4
20
1.32
600
300
164
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
45
20
10
20
30
4
TYP
122
151
500
500
1.4
1.5
4.8
8.4
91
28
24
55
-
-
-
-
-
-
MAX
HGTG20N60C3D Rev. B
250
110
145
210
550
700
5.0
1.8
1.9
6.3
250
32
28
98
-
-
-
-
UNITS
W/
o
o
W
V
A
A
A
V
V
C
C
UNITS
o
s
s
C
mA
nA
nC
nC
ns
ns
ns
ns
V
V
V
V
A
A
V
A
J
J

Related parts for HGTG20N60C3D