HGT1S20N35G3VLS Fairchild Semiconductor, HGT1S20N35G3VLS Datasheet - Page 6

• Manufacturer Part Number: HGT1S20N35G3VLS
• Description: IGBT ESD N-CHAN 350V TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S20N35G3VLS

• Voltage - Collector Emitter Breakdown (max): 380V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 5V, 20A
• Current - Collector (ic) (max): 20A
• Power - Max: 150W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2003 Fairchild Semiconductor Corporation
Test Circuits
R
5V
GEN
FIGURE 18. USE TEST CIRCUIT
= 25
R
G
G
DUT
C
E
2.3mH
V
DD
1/R
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
G
= 1/R
R
10V
GEN
GEN
+ 1/R
= 50
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. C
GE
G
R
GE
= 50
C
DUT
L = 550 H
E
R
L
+
-
V
300V
CC