HGT1S20N35G3VLS Fairchild Semiconductor, HGT1S20N35G3VLS Datasheet - Page 3

• Manufacturer Part Number: HGT1S20N35G3VLS
• Description: IGBT ESD N-CHAN 350V TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S20N35G3VLS

• Voltage - Collector Emitter Breakdown (max): 380V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 5V, 20A
• Current - Collector (ic) (max): 20A
• Power - Max: 150W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2003 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
40
30
20
10
10
40
20
1.4
50
30
0
1.3
1.2
1.1
0
1
0
PULSE DURATION = 250 s, DUTY CYCLE <0.5%, V
T
T
T
FIGURE 1. TRANSFER CHARACTERISTICS
C
T
I
C
C
CE
C
OF SATURATION VOLTAGE
= +175
= +25
= -40
= +175
-25
JUNCTION TEMPERATURE
= 10A
o
o
C
o
V
C
V
2
C
GE
o
CE(SAT)
T
C
V
J
1
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (
GE
= 4.5V
+25
, SATURATION VOLTAGE (V)
3
2
+75
V
GE
4
= 5.0V
V
V
GE
V
GE
3
GE
o
V
+125
C)
GE
= 4.0V
= 5.0V
5
= 4.5V
= 4.0V
CE
= 10V
+175
6
4
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
20
10
40
30
50
100
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
60
0
80
40
20
0
0
PULSE DURATION = 250 s, DUTY CYCLE <0.5%, T
0
FIGURE 2. SATURATION CHARACTERISTICS
V
OF SATURATION VOLTAGE
GE
JUNCTION TEMPERATURE
-25
V
I
V
= 4.5V
CE
CE
GE
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
= 20A
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. C
=10V
1
CE(SAT)
2
T
J
, JUNCTION TEMPERATURE (
, SATURATION VOLTAGE (V)
+25
7V
V
V
V
V
V
2
4
GE
GE
GE
GE
GE
-40
= 4.0V
= 4.5V
= 4.5V
= 4.5V
= 5.0V
o
C
6.5V
+75
3
6
5.0V
2.5V
6.0V
5.5V
4.5V
4.0V
3.5V
3.0V
+125
o
C)
8
4
+25
+175
C
o
C
o
= +25
C
+175
10
o
C
5