HGT1S20N35G3VLS Fairchild Semiconductor, HGT1S20N35G3VLS Datasheet - Page 4

• Manufacturer Part Number: HGT1S20N35G3VLS
• Description: IGBT ESD N-CHAN 350V TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S20N35G3VLS

• Voltage - Collector Emitter Breakdown (max): 380V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 5V, 20A
• Current - Collector (ic) (max): 20A
• Power - Max: 150W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2003 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
10
10
10
10
10
10
10
50
40
30
20
10
25
60
20
15
10
0
5
0
-1
3
2
1
0
4
5
+25
+25
0
PACKAGE LIMITED
+150
OF CASE TEMPERATURE
JUNCTION TEMPERATURE
CURRENT vs INDUCTANCE
+50
+50
o
C
T
2
J
T
, JUNCTION TEMPERATURE (
C
, CASE TEMPERATURE (
+75
+75
INDUCTANCE (mH)
V
+25
V
CES
ECS
4
o
C
= 250V
+100
= 20V
+100
V
GE
= 5V, R
6
+125
+125
(Continued)
G
o
C)
= 1K, V
o
C)
V
GE
+150
+150
8
= 5.0V
DD
= 14V
+175
+175
10
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
1.2
1.1
0.9
0.8
0.7
0.6
0.5
1.0
500
500
400
300
200
100
18
16
14
12
10
0
+25
0
V
CL
I
CE
-25
= 300V, R
FUNCTION OF JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
ENERGY vs INDUCTANCE
= 6A, R
+50
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. C
T
1
T
J
, JUNCTION TEMPERATURE (
J
GE
L
, JUNCTION TEMPERATURE (
+150
= 50
+25
+25
= 25 , V
+75
o
o
C
C
INDUCTANCE (mH)
I
CE
2
GE
=15A, R
+100
= 5V, L= 550µH
V
GE
+75
= 5V, R
L
= 20
3
+125
G
I
CE
= 1K, V
+125
o
=10A, R
C)
o
C)
4
+150
I
CE
DD
= 1mA
= 14V
L
= 30
+175
+175
5