HGT1S20N35G3VLS Fairchild Semiconductor, HGT1S20N35G3VLS Datasheet

HGT1S20N35G3VLS

Manufacturer Part Number

HGT1S20N35G3VLS

Description

IGBT ESD N-CHAN 350V TO-263AB

Manufacturer

Fairchild Semiconductor

Datasheet

1.HGT1S20N36G3VL.pdf (7 pages)

Specifications of HGT1S20N35G3VLS

Voltage - Collector Emitter Breakdown (max)

380V

Vce(on) (max) @ Vge, Ic

2.8V @ 5V, 20A

Current - Collector (ic) (max)

20A

Power - Max

150W

Input Type

Logic

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

Current page: 1 of 7
Download datasheet (248Kb)

November 2003

Absolute Maximum Ratings

Collector-Emitter Bkdn Voltage At 10mA, R

Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector Current Continuous At V

Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Inductive Switching Current At L = 2.3mH, T

Collector to Emitter Avalanche Energy At L = 2.3mH, T

Power Dissipation Total At T

Power Dissipation Derating T

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Electrostatic Voltage at 100pF, 1500 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD

NOTE: May be exceeded if I

Features

• Logic Level Gate Drive

• Internal Voltage Clamp

• ESD Gate Protection

• T

• Ignition Energy Capable

Description

This N-Channel IGBT is a MOS gated, logic level device

which is intended to be used as an ignition coil driver in auto-

motive ignition circuits. Unique features include an active

voltage clamp between the collector and the gate which pro-

vides Self Clamped Inductive Switching (SCIS) capability in

ignition circuits. Internal diodes provide ESD protection for

the logic level gate. Both a series resistor and a shunt resis-

tor are provided in the gate circuit.

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in the tape and reel, i.e.,

HGT1S20N35G3VLS9A.

The development type number for this device is TA49076.

HGTP20N35G3VL

HGT1S20N35G3VL

HGT1S20N35G3VLS

PART NUMBER

= 175

PACKAGING AVAILABILITY

At L = 2.3mH, T

GEM

At V

PACKAGE

T0-220AB

T0-262AA

T0-263AB

= +25

> +25

is limited to 10mA.

= 5.0V, T

C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

= 5.0V, T

C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +25

= +150

20N35GVL

= +25

= 1k . . . . . . . . . . . . . . . . . . . . . . . BV

= +100

= +25

C, Unless Otherwise Specified

BRAND

C . . . . . . . . . . . . . . . . . . . . . . I

C, Figure 7 . . . . . . . . . . . . . I

C . . . . . . . . . . . . . . . . . . . .I

= +25

C . . . . . . . . . . . . . . E

Packages

Terminal Diagram

Logic Level, Voltage Clamping IGBTs

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

, T

GATE

C100

SCIS

CER

GES

ECS

STG

C25

N-CHANNEL ENHANCEMENT MODE

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. C

EMITTER

GATE

HGT1S20N35G3VLS

HGT1S20N35G3VL,

HGT1S20N35G3VL

HGTP20N35G3VL

JEDEC TO-220AB

JEDEC TO-262AA

JEDEC TO-263AB

HGTP20N35G3VL,

-40 to +175

20A, 350V N-Channel,

375

500

150

260

EMITTER

1.0

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

UNITS

Related parts for HGT1S20N35G3VLS

HGT1S20N35G3VLS Summary of contents

Page 1

... HGT1S20N35G3VLS 20A, 350V N-Channel, JEDEC TO-220AB COLLECTOR EMITTER GATE JEDEC TO-262AA EMITTER COLLECTOR GATE JEDEC TO-263AB COLLECTOR (FLANGE) GATE EMITTER N-CHANNEL ENHANCEMENT MODE COLLECTOR EMITTER HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS UNITS 375 500 mJ AS 150 D 1.0 W/ -40 to +175 260 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev ...

Page 2

... -40 C 315 350 + +175 C 325 360 + + +175 + 1 +175 +175 +25 C 1 400 590 5V +150 + HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. C MAX UNITS 380 V 380 V 390 V 375 V 375 V 390 395 250 A 1.6 V 1.5 V 2.8 V 3 1000 1.0 C/W ...

Page 3

... PULSE DURATION = 250 s, DUTY CYCLE <0.5 =10V 6.5V GE 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2. COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 2. SATURATION CHARACTERISTICS 4.5V - SATURATION VOLTAGE (V) CE(SAT) OF SATURATION VOLTAGE I = 20A -25 +25 + JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev + + +175 +125 +175 o C) ...

Page 4

... FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING -25 +25 +75 +125 JUNCTION TEMPERATURE ( J FUNCTION OF JUNCTION TEMPERATURE V = 300V 5V, L= 550µ 6A =15A +25 +50 +75 +100 +125 T , JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE +150 INDUCTANCE (mH) ENERGY vs INDUCTANCE HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev 1mA CE +175 C) =10A +150 +175 14V ...

Page 5

... FIGURE 16. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE I = 10mA CER o C 6000 8000 10000 FREQUENCY = 1MHz C IES C OES C RES COLLECTOR-TO-EMITTER VOLTAGE (V) CE EMITTER VOLTAGE 0.5 0 0.1 0.05 DUTY FACTOR 0.02 1 PEAK 0.01 SINGLE PULSE - RECTANGULAR PULSE DURATION (s) 1 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev ...

Page 6

... Test Circuits GEN G 5V FIGURE 18. USE TEST CIRCUIT ©2003 Fairchild Semiconductor Corporation 2.3mH 1/R = 1/R G DUT E FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT 550 1/R GEN GE DUT GEN G 10V HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev 300V - ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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