APT45GP120B2DQ2G Microsemi Power Products Group, APT45GP120B2DQ2G Datasheet - Page 9

• Manufacturer Part Number: APT45GP120B2DQ2G
• Description: IGBT 1200V 113A 625W TMAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT45GP120B2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 45A
• Current - Collector (ic) (max): 113A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT45GP120B2DQ2GMI; APT45GP120B2DQ2GMI

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TYPICAL PERFORMANCE CURVES
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
current goes from positive to negative, to the point at which the straight
line through I
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
passes through zero.
T-MAX™ (B2) Package Outline
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
Figure 34, Diode Reverse Recovery Waveform and Definitions
RRM
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
and t rr .
Dimensions in Millimeters and (Inches)
e1 SAC: Tin, Silver, Copper
di
F
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
/dt Adjust
Figure 33. Diode Test Circui t
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
30µH
2-Plcs.
Zero
V r
15.49 (.610)
16.26 (.640)
APT10035LLL
1
TRANSFORMER
PEARSON 2878
CURRENT
2
5.38 (.212)
6.20 (.244)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
D.U.T.
Gate
Collector
(Cathode)
Emitter
(Anode)
3
APT45GP120B2DQ2(G)
4
5
t rr / Q rr
Waveform
0.25 I RRM