APT5018BLLG Microsemi Power Products Group, APT5018BLLG Datasheet
APT5018BLLG
Manufacturer Part Number
APT5018BLLG
Description
MOSFET N-CH 500V 27A TO-247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT5018BLLG.pdf
(5 pages)
Specifications of APT5018BLLG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
2596pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
V
I
E
E
D(on)
DS(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
(Repetitive and Non-Repetitive)
1
2
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D
(V
DS
C
DS
APT Website - http://www.advancedpower.com
1
= V
C
= 25°C
> I
= 25°C
4
GS
GS
D(on)
DS
, I
2
DS
®
= ±30V, V
GS
D
by significantly lowering R
= 400V, V
= 500V, V
(V
R
x R
= 1mA)
= 0V, I
GS
DS(on)
MOSFET
= 10V, 13.5A)
D
DS
= 250µA)
Max, V
GS
GS
= 0V)
= 0V, T
= 0V)
GS
All Ratings: T
= 10V)
C
= 125°C)
3
PAK Package
DS(ON)
C
500V 27A 0.180
= 25°C unless otherwise specified.
APT5018BLL
APT5018SLL
MIN
500
27
3
BLL
TO-247
-55 to 150
APT5018
1210
TYP
500
108
±30
±40
300
300
2.4
27
27
30
±100
MAX
0.18
100
500
5
D
G
3
SLL
PAK
Ohms
Amps
Watts
Amps
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
D
S
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APT5018BLLG Summary of contents
Page 1
POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...
Page 3
Typical Performance Curves RC MODEL Junction temp. ( ”C) 0.161 Power (Watts) 0.259 Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL > (ON (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY ...
Page 4
Typical Performance Curves 108 OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I ...
Page 5
Gate Voltage Drain Current t d(on) 90 Drain Voltage 10 % Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT15DF60B D.U.T. Figure 20, Inductive ...