APT11GP60BDQBG Microsemi Power Products Group, APT11GP60BDQBG Datasheet
APT11GP60BDQBG
Specifications of APT11GP60BDQBG
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APT11GP60BDQBG Summary of contents
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TYPICAL PERFORMANCE CURVES POWER MOS 7 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been ...
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Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...
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TYPICAL PERFORMANCE CURVES 15V. 250µs PULSE TEST 35 <0.5 % DUTY CYCLE 30 T =-55° =25° =125° COLLECTER-TO-EMITTER VOLTAGE (V) ...
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V = 15V 400V 25°C, T =125° 5Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) ...
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TYPICAL PERFORMANCE CURVES 2,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.70 0.9 0.60 0.50 0.7 0.40 0.5 0.30 0.3 0.20 0.10 0.1 0.05 ...
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APT15DF120 APT8DQ60 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage DrainVoltage t d(off) 90 10% Drain Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% t ...
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TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty Non-Repetitive Forward Surge Current (T FSM ...