APT45GP120B2DQ2G Microsemi Power Products Group, APT45GP120B2DQ2G Datasheet

IGBT 1200V 113A 625W TMAX

APT45GP120B2DQ2G

Manufacturer Part Number
APT45GP120B2DQ2G
Description
IGBT 1200V 113A 625W TMAX
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT45GP120B2DQ2G.pdf (9 pages)

Specifications of APT45GP120B2DQ2G

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 45A
Current - Collector (ic) (max)
113A
Power - Max
625W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
T-MAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT45GP120B2DQ2GMI
APT45GP120B2DQ2GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT45GP120B2DQ2G
Manufacturer:
TOSHIBA
Quantity:
4 000
The POWER MOS 7
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
RBSOA
T
V
V
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Biad Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
POWER MOS 7
1
(V
• 100 kHz operation @ 800V, 16A
• 50 kHz operation @ 800V, 28A
• RBSOA Rated
@ T
CE
CE
CE
7
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
@ T
C
®
GE
GE
C
= 150°C
GE
GE
= 110°C
= 15V, I
= 15V, I
C
= ±20V)
, I
= 25°C
J
C
GE
= 150°C
= 1mA, T
GE
GE
®
C
C
= 0V, I
IGBT
= 45A, T
= 45A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 750µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
APT45GP120B2DQ2(G)
1200
APT45GP120B2DQ2G*
APT45GP120B2DQ2
MIN
3
170A @ 960V
-55 to 150
APT45GP120B2DQ2(G)
1200
±30
113
170
625
300
TYP
54
4.5
3.3
3.0
1200V
G
G
C
3000
MAX
±100
E
750
3.9
6
T-Max
TM
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

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APT45GP120B2DQ2G Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT45GP120B2DQ2(G) APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. T-Max 25°C unless otherwise specified. C APT45GP120B2DQ2(G) 1200 ±30 113 54 170 170A @ 960V 625 -55 to 150 300 MIN TYP MAX ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Reverse Bias Safe Operating ...

Page 3

T = 25° 125° 0.5 1.0 1.5 2.0 2.5 3.0 3 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 160 250µs PULSE ...

Page 4

V = 15V 600V 25°C T =125° 5Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, ...

Page 5

TYPICAL PERFORMANCE CURVES 10,000 1,000 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.25 0.20 0.9 0.15 0.7 0.5 0.10 0.3 0.05 0.1 0. Figure ...

Page 6

APT40DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90 d(off) f Collector Voltage 90% 10% Switching Collector Current Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175° 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. Forward Voltage 5000 T = ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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