APT45GP120B2DQ2G Microsemi Power Products Group, APT45GP120B2DQ2G Datasheet - Page 5

• Manufacturer Part Number: APT45GP120B2DQ2G
• Description: IGBT 1200V 113A 625W TMAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT45GP120B2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 45A
• Current - Collector (ic) (max): 113A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT45GP120B2DQ2GMI; APT45GP120B2DQ2GMI

Case temperature. (°C)
TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
1,000
Junction
temp. (°C)
0.25
0.20
0.15
0.10
0.05
100
V
10
CE
0
10
(watts)
0
Power
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
10
0.05
0.9
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
20
0.0296
0.087
0.0837
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
0.000782
0.0150
0.185
C
C
oes
ies
res
50
SINGLE PULSE
10
-3
170
100
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
10
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
Figure 18,Minimim Reverse Bias Safe Operating Area
= 75
= 5Ω
180
160
140
120
100
20
= 800V
-2
80
60
40
20
0
°
I
°
C
C
0 100 200 300 400 500 600 700 800 900 1000
C
V
, COLLECTOR CURRENT (A)
30
CE
, COLLECTOR TO EMITTER VOLTAGE
40
50
Note:
Peak T J = P DM x Z θJC + T C
60
10
Duty Factor D =
-1
70
t 1
APT45GP120B2DQ2(G)
t 2
80
t 1
90
/
t 2
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f