APT45GP120B2DQ2G Microsemi Power Products Group, APT45GP120B2DQ2G Datasheet - Page 8

• Manufacturer Part Number: APT45GP120B2DQ2G
• Description: IGBT 1200V 113A 625W TMAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT45GP120B2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 45A
• Current - Collector (ic) (max): 113A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT45GP120B2DQ2GMI; APT45GP120B2DQ2GMI

Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure 30. Dynamic Parameters vs. Junction Temperature
5000
4500
4000
3500
3000
2500
2000
1500
1000
120
100
500
200
150
100
Figure 32. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
50
0
Figure 26. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
I
T
V
RRM
V
J
F
R
80A
F
T
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
= 800V
, ANODE-TO-CATHODE VOLTAGE (V)
J
T
200
, JUNCTION TEMPERATURE (°C)
25
J
V
= 125°C
t
rr
R
1
, REVERSE VOLTAGE (V)
T
J
400
50
= 175°C
Q
rr
10
600
75
2
20A
800
100
T
J
t
= -55°C
rr
3
T
1000
Q
J
125
rr
= 25°C
100 200
40A
1200
150
4
Figure 27. Reverse Recovery Time vs. Current Rate of Change
Figure 31. Maximum Average Forward Current vs. CaseTemperature
Figure 29. Reverse Recovery Current vs. Current Rate of Change
600
500
400
300
200
100
35
30
25
20
15
10
80
70
60
50
40
30
20
10
0
5
0
0
0
0
25
-di
-di
T
T
V
V
J
F
J
R
R
F
= 125°C
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
= 800V
= 800V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
20A
80A
600
600
100
80A
40A
40A
800
800
125
20A
Duty cycle = 0.5
T
1000
1000
J
150
= 175°C
1200
1200
175