APT45GP120B2DQ2G Microsemi Power Products Group, APT45GP120B2DQ2G Datasheet - Page 2

• Manufacturer Part Number: APT45GP120B2DQ2G
• Description: IGBT 1200V 113A 625W TMAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT45GP120B2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 45A
• Current - Collector (ic) (max): 113A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT45GP120B2DQ2GMI; APT45GP120B2DQ2GMI

THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 Continuous current limited by package lead temperature.
Symbol
Symbol
RBSOA
adding to the IGBT turn-on loss. (See Figure 24.)
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
V
t
t
t
t
R
R
C
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
GEP
on1
on2
on1
on2
θ
θ
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
JC
JC
g
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and FRED leakages
3
6
6
4
4
4
55
5
Inductive Switching (125°C)
15V, L = 100µH,V
Inductive Switching (25°C)
T
J
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
V
T
V
V
V
V
f = 1 MHz
J
CC
CE
I
I
I
R
J
R
CC
GE
GE
GE
C
C
C
= +125°C
= +25°C
G
G
= 45A
= 45A
= 45A
= 600V
= 600V
=600V
= 5Ω
= 5Ω
= 15V
= 15V
= 15V
G
CE
= 5Ω, V
CE
= 25V
= 960V
GE
=
MIN
170
MIN
3995
1870
3080
2255
TYP
300
185
100
900
905
150
900
TYP
7.5
5.9
55
25
80
18
29
38
18
29
80
MAX
MAX
.20
.61
UNIT
UNIT
°C/W
nC
pF
µ
µ
gm
ns
ns
V
A
J
J