APT45GP120B2DQ2G Microsemi Power Products Group, APT45GP120B2DQ2G Datasheet - Page 7

IGBT 1200V 113A 625W TMAX

APT45GP120B2DQ2G

Manufacturer Part Number
APT45GP120B2DQ2G
Description
IGBT 1200V 113A 625W TMAX
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT45GP120B2DQ2G

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 45A
Current - Collector (ic) (max)
113A
Power - Max
625W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
T-MAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT45GP120B2DQ2GMI
APT45GP120B2DQ2GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT45GP120B2DQ2G
Manufacturer:
TOSHIBA
Quantity:
4 000
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Symbol
I
Symbol
Symbol
F
I
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
F
(RMS)
I
I
I
I
RRM
RRM
RRM
FSM
(AV)
Q
Q
Q
V
t
t
t
t
rr
rr
rr
rr
F
rr
rr
rr
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
Characteristic / Test Conditions
Maximum Average Forward Current (T
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Characteristic / Test Conditions
Forward Voltage
10
-5
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.9
0.7
0.5
0.3
0.1
0.05
10
-4
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
I
F
Case temperature (°C)
= 1A, di
RECTANGULAR PULSE DURATION (seconds)
SINGLE PULSE
Junction
temp (°C)
F
/dt = -100A/µs, V
(watts)
Power
C
10
= 112°C, Duty Cycle = 0.5)
J
-3
= 45°C, 8.3ms)
I
I
I
I
F
F
F
I
I
F
F
F
= 45A
= 90A
= 40A, T
V
V
= 40A, di
V
= 40A, di
= 40A, di
R
R
R
RC MODEL
= 800V, T
= 800V, T
Test Conditions
= 800V, T
0.0442 °C/W
0.242 °C/W
0.324 °C/W
R
J
= 125°C
= 30V, T
F
F
F
/dt = -1000A/µs
All Ratings: T
/dt = -200A/µs
/dt = -200A/µs
10
C
C
C
-2
= 125°C
= 125°C
= 25°C
0.00222 J/°C
0.00586 J/°C
0.0596 J/°C
J
= 25°C
C
= 25°C unless otherwise specified.
Note:
Peak T J = P DM x Z θJC + T C
APT45GP120B2DQ2(G)
MIN
MIN
-
-
-
-
-
-
-
-
-
-
Duty Factor D =
10
-1
t 1
APT45GP120B2DQ2(G)
2200
3400
t 2
3.56
2.28
TYP
TYP
350
570
430
210
210
2.9
26
29
40
63
4
9
t 1
/
t 2
MAX
MAX
1.0
-
-
Amps
Amps
UNIT
Amps
Amps
UNIT
Volts
UNIT
nC
nC
nC
ns
ns
ns

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