APT45GP120B2DQ2G Microsemi Power Products Group, APT45GP120B2DQ2G Datasheet - Page 4

• Manufacturer Part Number: APT45GP120B2DQ2G
• Description: IGBT 1200V 113A 625W TMAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT45GP120B2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 45A
• Current - Collector (ic) (max): 113A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT45GP120B2DQ2GMI; APT45GP120B2DQ2GMI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
12000
10000
8000
7000
6000
5000
4000
3000
2000
1000
8000
6000
4000
2000
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
25
20
15
10
80
70
60
50
40
30
20
10
5
0
0
0
0
I
I
CE
CE
I
CE
V
V
R
V
T
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
CE
GE
G
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C
= 5Ω
= 5Ω
= 600V
= +15V
= 600V
=
R
5Ω, L
G
, GATE RESISTANCE (OHMS)
,
T
J
=
=125°C
100
T
J
µ
=
V
H, V
GE
25 or 125°C,V
CE
= 15V
=
600V
GE
=
15V
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
6000
5000
4000
3000
2000
1000
8000
7000
6000
5000
4000
3000
2000
1000
FIGURE 10, Turn-Off Delay Time vs Collector Current
180
160
140
120
100
100
FIGURE 12, Current Fall Time vs Collector Current
80
60
40
20
80
60
40
20
0
0
0
0
I
I
CE
CE
I
CE
V
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
=
T
V
=
J
GE
5Ω
, JUNCTION TEMPERATURE (°C)
600V
=15V,T
V
J
GE
=125°C
=15V,T
T
J
=
J
125°C, V
=25°C
GE
=
15V