FGH50N6S2D Fairchild Semiconductor, FGH50N6S2D Datasheet - Page 8

• Manufacturer Part Number: FGH50N6S2D
• Description: IGBT N-CHAN 600V 75A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH50N6S2D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 463W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 463W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: FGH50N6S2D_NL; FGH50N6S2D_NL

©2002 Fairchild Semiconductor Corporation
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge
of energy through the devices. When handling these
devices, care should be exercised to assure that the
static charge built in the handler’s body capacitance
is not discharged through the device. With proper
handling and application procedures, however,
IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with
virtually no damage problems due to electrostatic
discharge. IGBTs can be handled safely if the
following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be
2. When devices are removed by hand from their
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
5. Gate Voltage Rating - Never exceed the gate-
6. Gate Termination - The gates of these devices
7. Gate Protection - These devices do not have an
kept shorted together either by the use of metal
shorting springs or by the insertion into conduc-
tive material such as “ECCOSORBD™ LD26” or
equivalent.
carriers, the hand being used should be grounded
by any suitable means - for example, with a
metallic wristband.
from circuits with power on.
voltage rating of V
can result in permanent damage to the oxide layer
in the gate region.
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
GEM
. Exceeding the rated V
GE
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (I
possible using the information shown for a typical unit
in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
f
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. t
defined in Figure 27. Device turn-off delay can
establish an additional frequency limiting condition for
an application other than T
when controlling output ripple under a lightly loaded
condition.
f
The allowable dissipation (P
P
and conduction losses must not exceed P
duty factor was used (Figure 3) and the conduction
losses (P
E
waveforms shown in Figure 27. E
the instantaneous power loss (I
on and E
power loss (I
are included in the calculation for E
collector current equals zero (I
MAX1
MAX1
MAX2
D
ON2
= (T
and E
is defined by f
or f
is defined by f
JM
OFF
MAX2
C
- T
) are approximated by P
OFF
C
CE
is the integral of the instantaneous
)/R
; whichever is smaller at each point.
x V
are defined in the switching
JC
MAX2
CE
. The sum of device switching
MAX1
) during turn-off. All tail losses
= (P
= 0.05/(t
JM
D
) is defined by
D
. t
- P
CE
d(OFF)I
d(OFF)I
CE
ON2
C
= 0)
d(OFF)I
x V
)/(E
OFF
C
is the integral of
= (V
CE
OFF
and t
is important
CE
; i.e., the
) during turn-
+ t
) plots are
CE
+ E
D
FGH50N6S2D RevA2
d(ON)I
d(ON)I
. A 50%
x I
ON2
CE
).
).
are
)/2.