FGH50N6S2D Fairchild Semiconductor, FGH50N6S2D Datasheet - Page 5

• Manufacturer Part Number: FGH50N6S2D
• Description: IGBT N-CHAN 600V 75A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH50N6S2D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 463W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 463W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: FGH50N6S2D_NL; FGH50N6S2D_NL

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 17. Capacitance vs Collector to Emitter
250
225
200
175
150
125
100
4.0
1.0
3.5
3.0
2.5
2.0
1.5
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
75
50
25
Figure 15. Total Switching Loss vs Case
0
0
4
0
25
1
Figure 13. Transfer Characteristic
E
FREQUENCY = 1MHz
R
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
TOTAL
G
10
TJ = 25
= 3 , L = 200 H, V
C
V
RES
= E
CE
5
20
50
V
, COLLECTOR TO EMITTER VOLTAGE (V)
ON2
o
C
GE
C
C
OES
IES
T
, GATE TO EMITTER VOLTAGE (V)
+ E
C
30
TJ = 125
Temperature
, CASE TEMPERATURE (
OFF
6
Voltage
40
CE
75
CE
o
= 390V, V
C
= 10V
50
7
100
GE
60
TJ = -55
I
I
I
CE
CE
CE
= 15V
8
= 60A
= 30A
= 15A
70
o
C)
o
C
125
T
80
J
9
= 25°C unless otherwise noted
90
150
100
10
Figure 18. Collector to Emitter On-State Voltage vs
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
100
0.1
16
14
12
10
10
Figure 16. Total Switching Loss vs Gate
8
6
4
2
0
1
1.0
6
0
I
T
E
G(REF)
V
J
TOTAL
CE
= 125
7
10
= 600V
I
I
I
CE
CE
CE
= 1mA, R
Figure 14. Gate Charge
= E
Gate to Emitter Voltage
V
o
C, L = 200 H, V
= 60A
= 30A
= 15A
CE
V
8
ON2
GE
I
= 200V
CE
20
, GATE TO EMITTER VOLTAGE (V)
V
Q
R
+ E
= 45A
CE
9
L
G
G
Resistance
, GATE RESISTANCE ( )
10
I
= 10
, GATE CHARGE (nC)
OFF
CE
= 400V
30
= 30A
10
I
CE
CE
= 390V, V
11
40
= 15A
DUTY CYCLE < 0.5%
PULSE DURATION = 250 s
12
50
GE
100
= 15V
13
60
14
FGH50N6S2D RevA2
70
15
1000
80
16