FGH50N6S2D Fairchild Semiconductor, FGH50N6S2D Datasheet - Page 7

• Manufacturer Part Number: FGH50N6S2D
• Description: IGBT N-CHAN 600V 75A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH50N6S2D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 463W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 463W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: FGH50N6S2D_NL; FGH50N6S2D_NL

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
Test Circuit and Waveforms
Figure 26. Inductive Switching Test Circuit
10
10
10
-1
-2
R
0
10
G
0.20
-5
0.50
0.10
0.05
0.02
0.01
= 3
FGH50N6S2D
Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case
SINGLE PULSE
10
-4
L = 200 H
+
-
DIODE TA49392
FGH50N6S2D
V
10
DD
t
T
1
-3
, RECTANGULAR PULSE DURATION (s)
J
= 390V
= 25°C unless otherwise noted
10
V
V
I
CE
-2
GE
CE
Figure 27. Switching Test Waveforms
t
d(OFF)I
90%
DUTY FACTOR, D = t
PEAK T
10
10%
-1
t
fI
J
P
= (P
D
E
OFF
D
90%
X Z
t
1
t
JC
2
1
E
X R
ON2
/ t
10
2
10%
0
JC
t
d(ON)I
) + T
t
rI
C
FGH50N6S2D RevA2
10
1