FGH50N6S2D Fairchild Semiconductor, FGH50N6S2D Datasheet
FGH50N6S2D
Specifications of FGH50N6S2D
FGH50N6S2D_NL
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FGH50N6S2D Summary of contents
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... FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth General Description The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive ...
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... Min Typ Max Units 600 - - 250 2 ±250 nA - 1.9 2 1.7 2 2.2 2 110 nC 3.5 4.3 5 6.5 8 150 - - 260 - J - 330 - J - 250 350 150 100 ns - 260 - J - 490 600 J - 575 850 0.27 °C 1.1 °C/W is the turn-on loss ON1 = 0A). All devices were tested per CE FGH50N6S2D RevA2 J ...
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... L = 100 100 200 300 400 500 600 V , COLLECTOR TO EMITTER VOLTAGE ( 390V 125 GATE TO EMITTER VOLTAGE (V) GE =10V 150 125 J 0.75 1.00 1.25 1.50 1.75 2 COLLECTOR TO EMITTER VOLTAGE (V) CE FGH50N6S2D RevA2 700 900 800 700 600 500 400 300 200 2.25 ...
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... Figure 12. Fall Time vs Collector to Emitter = 200 390V 125 10V 15V 10V COLLECTOR TO EMITTER CURRENT (A) CE Emitter Current = 200 390V 125 10V 125 C, V =15V COLLECTOR TO EMITTER CURRENT (A) CE Emitter Current 200 390V 125 10V 10V 15V COLLECTOR TO EMITTER CURRENT (A) CE Current FGH50N6S2D RevA2 = 15V 15V 60 ...
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... GATE CHARGE (nC) G Figure 14. Gate Charge o = 125 200 390V 15V TOTAL ON2 OFF I = 60A 30A 15A CE 10 100 R , GATE RESISTANCE ( ) G Resistance DUTY CYCLE < 0.5% PULSE DURATION = 250 45A 30A 15A GATE TO EMITTER VOLTAGE (V) GE Gate to Emitter Voltage FGH50N6S2D RevA2 70 80 1000 15 16 ...
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... FORWARD CURRENT ( 390V o 125 30A EC o 125 15A 30A 15A EC 400 600 800 1000 dI /dt, RATE OF CHANGE OF CURRENT ( Current = 390V 125° 30A 15A EC 400 600 800 1000 dI /dt, CURRENT RATE OF CHANGE ( Rate of Change of Current FGH50N6S2D RevA2 1200 1200 ...
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... Test Circuit and Waveforms L = 200 FGH50N6S2D Figure 26. Inductive Switching Test Circuit ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) 1 FGH50N6S2D DIODE TA49392 390V DD - Figure 27. Switching Test Waveforms DUTY FACTOR PEAK 90% 10% E ON2 E OFF 90% 10% t d(OFF d(ON)I FGH50N6S2D RevA2 1 10 ...
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... E collector current equals zero (I ECCOSORBD is a Trademark of Emerson and Cumming, Inc. ) plots are CE = 0.05/( d(OFF)I d(ON)I and t are d(OFF)I d(ON important JM d(OFF )/( OFF ON2 ) is defined 50 )/ the integral of ON2 during turn i.e., the OFF = 0) CE FGH50N6S2D RevA2 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...