HGTG27N120BN Fairchild Semiconductor, HGTG27N120BN Datasheet - Page 6

• Manufacturer Part Number: HGTG27N120BN
• Description: IGBT NPT N-CH 1200V 72A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG27N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 27A
• Current - Collector (ic) (max): 72A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 72 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 72 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 72A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
Test Circuit and Waveforms
©2004 Fairchild Semiconductor Corporation
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
10
10
10
-1
-2
10
0
-5
R
0.5
0.02
0.01
0.2
0.1
0.05
G
= 3
SINGLE PULSE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
-4
RHRP30120
L = 1mH
HGTG27N120BN / HGT5A27N120BN
+
-
Unless Otherwise Specified (Continued)
V
10
DD
t
-3
1
, RECTANGULAR PULSE DURATION (s)
= 960V
10
-2
V
V
I
DUTY FACTOR, D = t
CE
PEAK T
GE
CE
J
FIGURE 19. SWITCHING TEST WAVEFORMS
= (P
D
X Z
t
10
d(OFF)I
90%
-1
JC
1
10%
/ t
X R
2
t
fI
JC
) + T
E
OFF
HGTG27N120BN / HGT5A27N12BN Rev. C2
C
90%
10
P
D
0
E
ON2
10%
t
d(ON)I
t
1
t
2
t
rI
10
1