HGTG27N120BN Fairchild Semiconductor, HGTG27N120BN Datasheet - Page 3

• Manufacturer Part Number: HGTG27N120BN
• Description: IGBT NPT N-CH 1200V 72A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG27N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 27A
• Current - Collector (ic) (max): 72A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 72 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 72 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 72A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
NOTES:
Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
4. Turn-Off Energy Loss (E
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
100
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 18.
80
70
60
50
40
30
20
10
50
10
0
1
25
5
P
f
f
R
MAX1
MAX2
C
ØJC
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
PARAMETER
TEMPERATURE
EMITTER CURRENT
= 0.25
I
= 0.05 / (t
= (P
CE
50
, COLLECTOR TO EMITTER CURRENT (A)
D
o
- P
C/W, SEE NOTES
T
10
C
C
d(OFF)I
T
, CASE TEMPERATURE (
) / (E
J
= 150
OFF
ON2
75
+ t
o
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
C, R
d(ON)I
+ E
T
75
OFF
75
C
T
G
C
o
)
= 25
= 3 , L = 1mH, V
o
20
C
C
)
100
110
110
o
V
15V
12V
HGTG27N120BN / HGT5A27N120BN
C, Unless Otherwise Specified (Continued)
T
GE
C
o
o
C
C
o
SYMBOL
Unless Otherwise Specified
C)
t
t
d(OFF)I
E
E
E
d(ON)I
R
V
15V
12V
ON1
ON2
OFF
t
t
125
GE
rI
fI
JC
V
CE
GE
CE
= 960V
= 15V
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
IGBT and Diode at T
I
V
V
R
L = 1mH,
Test Circuit (Figure 18)
CE
150
GE
CE
G
60
= 3 ,
= 27A,
= 960V,
= 15V,
TEST CONDITIONS
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
200
160
120
50
40
30
20
10
40
80
J
0
0
11
= 150
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
V
J
CE
= 150
o
C,
= 960V, R
200
V
CE
12
V
o
GE
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
ON1
, GATE TO EMITTER VOLTAGE (V)
J
G
as the IGBT. The diode type is specified in
400
G
= 3 , V
= 3 , T
is the turn-on loss of the IGBT only. E
13
MIN
-
-
-
-
-
-
-
-
GE
600
J
= 125
= 15V, L = 200 H
HGTG27N120BN / HGT5A27N12BN Rev. C2
14
o
C
TYP
220
140
800
2.7
5.1
3.4
22
20
-
1000
15
MAX
0.25
280
200
6.5
4.2
28
25
-
I
t
SC
SC
1200
16
UNITS
o
500
400
300
200
100
0
C/W
mJ
mJ
mJ
ns
ns
ns
ns
1400
ON2