HGTG27N120BN Fairchild Semiconductor, HGTG27N120BN Datasheet - Page 4

• Manufacturer Part Number: HGTG27N120BN
• Description: IGBT NPT N-CH 1200V 72A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG27N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 27A
• Current - Collector (ic) (max): 72A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 72 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 72 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 72A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
40
35
30
25
20
15
140
120
100
15.0
12.5
10.0
80
60
40
20
7.5
5.0
2.5
0
5
0
0
R
5
DUTY CYCLE <0.5%, V
250 s PULSE TEST
G
T
10
J
R
= 3 , L = 1mH, V
= 150
G
10
I
CE
EMITTER CURRENT
EMITTER CURRENT
V
= 3 , L = 1mH, V
I
CE
T
CE
, COLLECTOR TO EMITTER CURRENT (A)
15
C
o
15
, COLLECTOR TO EMITTER CURRENT (A)
= -55
, COLLECTOR TO EMITTER VOLTAGE (V)
2
C, V
20
GE
20
o
C
T
T
J
J
= 12V, V
T
CE
25
= 25
= 25
J
25
= 25
= 960V
CE
GE
4
o
o
C, T
C, T
30
30
o
GE
= 960V
= 12V
C, V
J
J
= 15V
T
35
= 150
= 150
35
C
GE
= 25
= 12V, V
6
40
o
o
40
HGTG27N120BN / HGT5A27N120BN
o
C, V
C, V
C
45
GE
GE
Unless Otherwise Specified (Continued)
GE
45
= 12V
= 15V
= 15V
T
50
C
8
50
= 150
55
55
o
C
60
10
60
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
200
160
120
6
5
4
3
2
1
0
80
40
80
70
60
50
40
30
20
10
0
5
0
0
5
R
DUTY CYCLE <0.5%, V
250 s PULSE TEST
R
G
T
T
G
10
J
J
= 3 , L = 1mH, V
10
= 150
= 3 , L = 1mH, V
= 25
T
C
EMITTER CURRENT
EMITTER CURRENT
V
I
CE
15
I
CE
o
CE
= -55
15
C, T
o
, COLLECTOR TO EMITTER CURRENT (A)
2
, COLLECTOR TO EMITTER VOLTAGE (V)
C, V
, COLLECTOR TO EMITTER CURRENT (A)
o
J
20
C
GE
20
= 150
= 12V OR 15V
25
CE
CE
o
25
C, V
GE
4
= 960V
= 960V
T
30
GE
J
30
HGTG27N120BN / HGT5A27N12BN Rev. C2
= 15V
= 25
T
= 12V
T
J
C
35
= 25
o
35
= 25
C, T
6
o
C, V
40
J
o
40
C
= 150
GE
45
45
o
= 12V OR 15V
C, V
T
C
8
50
50
GE
= 150
= 15V
55
55
o
C
10
60
60